Chemical Mechanical Polishing Conditioner Made From Woven Preform

ABSTRACT

The present invention relates to a chemical mechanical polishing conditioner made from a woven preform, comprising: a substrate; a bonding layer disposed on the substrate; and a plurality of abrasive particles embedded in the bonding layer and fixed on the substrate by the bonding layer; wherein the bonding layer is formed by heat-curing a woven preform, and the abrasive particles are fixed to the woven preform in advance. Therefore, the present invention can provide the bonding layer with a better flexibility by the woven preform, and solve the conventional problem of resin residue in a powder-form bonding layer, or thermal cracking or thermal deformation of a sheet-form bonding layer during the heating and curing process, and thus improve the polishing performance and service time of the chemical mechanical polishing conditioner.

CROSS REFERENCE TO RELATED APPLICATION

This application claims the benefits of the Taiwan Patent ApplicationSerial Number 102129453, filed on Aug. 16, 2013, the subject matter ofwhich is incorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a chemical mechanical polishingconditioner, and more particularly to a chemical mechanical polishingconditioner made from woven preform.

2. Description of Related Art

Chemical mechanical polishing (CMP) is a common polishing process invarious industries, which can be used to grind surfaces of variousarticles, including ceramics, silicon, glass, quartz, or a metal chip.In addition, with the rapid development of integrated circuits, chemicalmechanical polishing has become one of the most common techniques forwafer planarization due to its goal of an extensive planarizationability.

During the chemical mechanical polishing process of semiconductor,impurities or uneven structure on the wafer surface is removed bycontacting the wafer (or the other semiconductor element) with apolishing pad and using a polishing liquid if necessary, through thechemical reaction and physical mechanical force. When the polishing padhas been used for a certain period of time, the polishing performanceand efficiency are reduced because the debris produced in the polishingprocess may accumulate on the surface of the polishing pad. Therefore, aconditioner can be used to condition the surface of the polishing pad,such that the surface of the polishing pad is re-roughened andmaintained at an optimum condition for polishing. In the process formanufacturing a conditioner, it is necessary to dispose an abrasivelayer by mixing abrasive particles and a bonding layer on the substratesurface, and to fix the abrasive layer to the substrate surface bybrazing or sintering methods.

The current method for manufacturing the chemical mechanical polishingconditioner mainly uses a powder-form bonding layer (i.e. using metalpowders or brazing alloy powders as the bonding layer) or a sheet-formbonding layer (i.e. vacuum compressing metal powders or brazing powdersto form a binding sheet). However, during curing of the bonding layer(or abrasive layer), the powder-form bonding layer often needsadditional adhesives (e.g., an organic resin) to form a semi-curedsheet-form preform. Moreover, the adhesive often remains in the bondinglayer during the heat-curing process, and the binding strength betweenthe bonding layer and the abrasive particles or the substrate isreduced; thereby impairing the quality and performance of the chemicalmechanical polishing conditioner. Furthermore, since the sheet-formbonding layer is formed by vacuum compression treatment, the flexibilityof the sheet-form bonding layer is poor, and a thermal cracking oftenoccurs during the heat-curing process, thereby adversely affecting thepolishing efficiency and service life of the chemical mechanicalpolishing conditioner.

In the known technology, it discloses a two-sided emery cloth structurewith chip discharging function, more particularly, relates to aninnovative structure which addresses the problems of conventionalsingle-sided emery polishing cloth, such as deceasing rapidly polishingefficiency, accelerating deterioration, and shortening service life. Thetwo-sided emery cloth structure comprises a web layer with a mesh formedby weaving vertical and horizontal lines, and an emery layer is combinedwith both the front and rear surfaces of the web layer to provide atwo-sided emery cloth with chip discharging function. Then, a fixedpiece of fiber fabrics is combined with one side surface of the weblayer with a mesh, to construct a two-sided emery cloth in which frontand rear sides thereof can be combined with a grinding wheel in turn bythe fixed piece. As such, not only the service life can be extendedtwice, but also grinding debris can be discharged smoothly by adischarging mesh to avoid block of the gap between the emery particlesto maintain better polishing sharpness and polishing efficiency. Also,the emery cloth deterioration due to the increased polishing temperaturecan be avoided to prolong the durability of the emery cloth.

In addition, in another known technology, it discloses a cutting-offwheel, more particularly, a resin abrasive cut-off wheel for cuttingmetallic materials and with solid-shaped integrity. The utility model isdisk-shaped, and the center of the wheel is provided with an opening.The cutting-off wheel is composed of abrasive particles, organic resin,a fiberglass netting cloth, and short glass fiber wires. The abrasiveparticles and the short glass fiber wires are homogenously distributedinside the organic resin. The glass fiber netting cloth is parallel totwo end surfaces and evenly and axially distributed inside the organicresin, and the abrasive particles are exposed on the two end surfaces.Formaldehyde-phenol resin is chosen as the organic resin. The abrasiveparticles are particles of brown fused alumina, white alumina, rubbinggrain, zirconium-corundum, didymium alumina, black silicon carbide,green silicon carbide, boron carbide, boron nitride, diamond grain ordiamond. The utility model has the advantages of large size, highintensity, and hot cutting, being suitable for high speed cutting oflarge size metal, and long service life.

However, in the above emery cloth structure or cutting-off wheel, theabrasive particles or diamond particles are mainly fixed on the surfaceof a fabric cloth or fabric web by a binding agent (e.g., organicresin), but the fabric cloth or fabric web still has a porous networkstructure after heat-curing. Therefore, when the fabric cloth or fabricweb is directly used as a bonding layer of the chemical mechanicalpolishing conditioner, the overall mechanical strength of the chemicalmechanical polishing conditioner is still insufficient, thus decreasingthe polishing performance.

Therefore, there is an urgent need to develop a flexible chemicalmechanical polishing conditioner, which can solve the problem of residueglue or thermal cracking during the curing of the chemical mechanicalpolishing conditioner, and can enhance the binding strength andpolishing performance of the chemical mechanical polishing conditioner.

SUMMARY OF THE INVENTION

An object of the present invention is to provide a chemical mechanicalpolishing conditioner made from woven preform, which can effectivelysolve the problem of residue glue or thermal cracking in the chemicalmechanical polishing conditioner during curing, so as to achieve thedesirable surface binding strength of the chemical mechanical polishingconditioner. Furthermore, in the present invention, since the bondinglayer is formed by heat-curing the woven preform, a more excellentflexibility can be provided by the woven preform, while the chemicalmechanical polishing conditioner with a more excellent binding strengthand polishing performance can be provided.

To achieve the above object, the present invention provides a chemicalmechanical polishing conditioner made from woven preform, comprising: asubstrate; a bonding layer disposed on the substrate; and a plurality ofabrasive particles embedded in the bonding layer and fixed on thesubstrate by the bonding layer; wherein the bonding layer is formed byheat-curing a woven preform, and the abrasive particles are fixed towoven preform through an adhesive or an extrusion method in advance.Furthermore, in the above chemical mechanical polishing conditioner madefrom woven preform of the present invention, the melting point of thewoven preform is below the heat-curing temperature, and therefore, thewoven preform is transformed from the original porous network structureinto a bonding layer with a dense structure after the heat-curingprocess, thereby providing the flexibility of the network structure andthe binding strength of the dense structure.

In the chemical mechanical polishing conditioner made from woven preformof the present invention, the woven preform may have a first directionalwoven matrix and a second directional woven matrix, wherein a wovenspace may be formed between the first directional woven matrix and thesecond directional woven matrix adjacent thereto. Furthermore, in theabove chemical mechanical polishing conditioner made from woven preformof the present invention, the maximum diameter of the woven space may be0.1 to 5 times the diameter of the abrasive particles, that is, thenumber of the abrasive particles in the woven space may be varied basedon the user's requirements or the polishing conditions, wherein 1 to 5of the abrasive particles may be included in the woven space. In anaspect of the present invention, one abrasive particle may be includedin the woven space. In a preferred aspect of the present invention,three abrasive particles may be included in the woven space.

In the chemical mechanical polishing conditioner made from woven preformof the present invention, the abrasive particles may be disposed on thesurface of the woven preform, or the abrasive particles may be disposedin the woven space of the woven preform, that is, the abrasive particlesand the woven space may have the same or different arrangement.Additionally, the abrasive particles may be controlled to be disposed onthe surface of the woven preform or in the woven space by adjusting themaximum diameter of the woven space and the diameter of the abrasiveparticles. Furthermore, in the above chemical mechanical polishingconditioner made from woven preform of the present invention, thearrangement of the abrasive particles may be varied based on the user'srequirements or the polishing conditions, wherein the abrasive particlesmay have a patterned arrangement or an irregular arrangement.

In the chemical mechanical polishing conditioner made from woven preformof the present invention, the woven preform may have a first directionalwoven matrix and a second directional woven matrix, wherein the includedangle between the first directional woven matrix and the seconddirectional woven matrix may be 10 to 90 degrees. In an aspect of thepresent invention, the angle between the first directional woven matrixand the second directional woven matrix is 90 degrees. In another aspectof the present invention, the included angle between the firstdirectional woven matrix and the second directional woven matrix is 60degrees. In yet another aspect of the present invention, the includedangle between the first directional woven matrix and the seconddirectional woven matrix is 45 degrees.

In the chemical mechanical polishing conditioner made from woven preformof the present invention, in addition to the first directional wovenmatrix and the second directional woven matrix, the woven preform mayfurther comprise a third directional woven matrix and a fourthdirectional woven matrix, wherein each of the above woven matrixes maybe disposed in a different direction, and may form an included anglewith each other or form a woven space by the woven matrixes withdifferent directions. In an aspect of the present invention, the wovenpreform may have the first directional woven matrix and the seconddirectional woven matrix. In another aspect of the present invention,the woven preform may have the first directional woven matrix, thesecond directional woven matrix and the third directional woven matrix.In yet another aspect of the present invention, the woven preform mayhave the first directional woven matrix, the second directional wovenmatrix, the third directional woven matrix and the fourth directionalwoven matrix. Furthermore, in the above chemical mechanical polishingconditioner made from woven preform of the present invention, the numberof the laminated layers of the woven preform may be varied based on theuser's requirements or the polishing conditions, wherein the wovenpreform may be a single-layer woven structure or a multilayer wovenstructure. In an aspect of the present invention, the woven preform maybe a single-layer woven structure, and the thickness of the wovenpreform may be varied based on the size of the abrasive particles.

In the chemical mechanical polishing conditioner made from woven preformof the present invention, the abrasive particles may be artificialdiamond, nature diamond, polycrystalline diamond or cubic boron nitride.In a preferred aspect of the present invention, the abrasive particlesmay be diamond. Furthermore, in the chemical mechanical polishingconditioner made from woven preform of the present invention, theabrasive particles may have a particle size of 30 to 600 μm. In apreferred aspect of the present invention, the abrasive particles mayhave a particle size of 200 μm.

In the chemical mechanical polishing conditioner made from woven preformof the present invention, the composition of the bonding layer or thewoven preform may be varied based on the user's requirements or thepolishing conditions, which includes: a ceramic material, a brazingmaterial, an electroplating material, a metallic material, or a polymermaterial, but the present invention is not limited thereto. In anotheraspect of the present invention, the woven preform is made of a ceramicmaterial, and for example, the glass fiber cloth or the carbon fibercloth formed of a glass fiber or carbon fiber is used as the wovenpreform. In another aspect of the present invention, the woven preformis made of a brazing material, and for example, the brazing wovenpreform is formed of a nickel-based brazing material by compressionmolding, wherein the brazing material is at least one selected from thegroup consisting of iron, cobalt, nickel, chromium, manganese, silicon,aluminum, and combinations thereof. In yet another aspect of the presentinvention, the woven preform may be made of a polymer material, and forexample, the polymeric woven preform is formed by injection molding orextrusion molding of a polymer material; wherein the polymer materialsuch as epoxy resin, polyester resin, polyacrylic resin, or phenolicresin.

In the chemical mechanical polishing conditioner made from woven preformof the present invention, the substrate may be made of stainless steelto provide the chemical mechanical polishing conditioner with excellentmechanical strength and chemical resistance. Furthermore, in the abovechemical mechanical polishing conditioner made from woven preform of thepresent invention, the surface shape of the substrate may be variedbased on the user′ requirements or the polishing conditions, wherein thesubstrate surface may be a planar surface, a convex surface, or aconcave surface. In an aspect of the present invention, the substratesurface may be planar. In another aspect of the present invention, thesubstrate surface may be a concave surface.

In summary, according to the chemical mechanical polishing conditionermade from woven preform of the present invention, the chemicalmechanical polishing conditioner can effectively solve the problem ofresidue glue or thermal cracking during curing. Moreover, the wovenpreform has a more excellent flexibility, and provides the chemicalmechanical polishing conditioner with a more excellent binding strengthand polishing performance.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other objects, features and other advantages of thepresent invention will be more clearly understood from the followingdetailed description taken in conjunction with the accompanyingdrawings, in which:

FIGS. 1A to 1C show a flow diagram for manufacturing a conventionalchemical mechanical polishing conditioner according to ComparativeExample 1.

FIGS. 2A to 2B show another flow diagram for manufacturing aconventional chemical mechanical polishing conditioner according toComparative Example 2.

FIGS. 3A to 3C show a flow diagram for manufacturing the chemicalmechanical polishing conditioner made from woven preform according toExample 1 of the present invention.

FIG. 4 shows a schematic diagram of the woven preform according toExample 1 of the present invention.

FIG. 5 shows a schematic diagram of the woven preform according toExample 2 of the present invention.

FIG. 6 shows a schematic diagram of the woven preform according toExample 3 of the present invention.

FIGS. 7 and 8 show schematic diagrams of the chemical mechanicalpolishing conditioner made from woven preform according to Examples 4and 5 of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

Hereinafter, the actions and the effects of the present invention willbe explained in more detail via specific examples of the invention.However, these examples are merely illustrative of the present inventionand the scope of the invention should not be construed to be definedthereby.

Comparative Example 1

With refer to FIGS. 1A to 1C, there is shown a flow diagram formanufacturing a conventional chemical mechanical polishing conditionerhaving a sheet-form bonding layer. First, as shown in FIGS. 1A and 1B, aplurality of abrasive particles 12 are disposed on a bonding layer 11and the bonding layer 11 is disposed on a substrate 10. The bondinglayer 11 is a sheet-form bonding layer formed of a nickel-based metallicbrazing material by vacuum compression molding. The substrate 10 is madeof stainless steel, and the abrasive particles 12 is formed of a typicalartificial diamond and embedded on the bonding layer 11 by using a knowndiamond distribution technique (for example, template distribution). Thespacing and arrangement of the abrasive particles 12 are controlled bythe template (not shown).

Then, as shown in FIG. 1C, a heat-curing process is performed to fix theabrasive particles 12 to the surface of the substrate 10 by the bondinglayer 11, along with a plurality of cracks 13 formed on the bondinglayer 11. Thus, since the sheet-form bonding layer is formed by vacuumcompression molding, the flexibility of the sheet-form bonding layer ispoor, and thermal cracking often occurs during heat-curing process,thereby disadvantageously affecting the polishing efficiency and servicelife of the chemical mechanical polishing conditioner.

Comparative Example 2

With refer to FIGS. 2A to 2B, there is shown another flow diagram formanufacturing a conventional chemical mechanical polishing conditionerhaving a powder-form bonding layer. First, as shown in FIG. 2A, abonding layer 21 is disposed on a substrate 20, and a plurality ofabrasive particles 22 are disposed on a bonding layer 21. The bondinglayer 21 is a power-form bonding layer formed of a nickel-based metallicbrazing material. The substrate 20 is made of stainless steel, and theabrasive particles 22 is formed of a typical artificial diamond andembedded on the bonding layer 21 by using the known diamond distributiontechnique. The spacing and arrangement of the abrasive particles 22 arecontrolled by the template (not shown).

Then, as shown in FIG. 2B, a heat-curing process is performed to fix theabrasive particles 22 to the surface of the substrate 20 by the bondinglayer 21, along with a plurality of cracks 23 formed on the bondinglayer 21. Thus, since the power-form bonding layer usually needsadditional adhesives (such as organic resins) to form a semi-curedsheet-form preform, the adhesive often remains in the bonding layerduring the heat-curing process, resulting in a decreased bindingstrength between the bonding layer and the abrasive particles or thesubstrate, thereby damaging the quality and performance of the chemicalmechanical polishing conditioner.

Example 1

With refer to FIGS. 3A to 3C, there is shown the flow diagram formanufacturing the chemical mechanical polishing conditioner according toExample 1 of the present invention. First, as shown in FIGS. 3A and 3B,a plurality of abrasive particles 32 are disposed on a woven preform 310in advance, and the woven preform 310 is disposed on a substrate 30,wherein the woven preform 310 is a porous network structure formed of aglass fiber cloth, the substrate 30 is made of stainless steel, and theabrasive particles 32 is formed of a typical artificial diamond andfixed on the woven preform 310 by using the known diamond distributiontechnique.

Then, as shown in FIG. 3C, a heat-curing process is performed, such thatthe woven preform 310 is formed into the bonding layer 31, wherein themelting point of the woven preform 310 is below the heat-curingtemperature. For example, the heat-curing temperature is raised to2,000° C. or more, to transform the woven preform 310 formed of theglass fiber cloth from a solid state into a molten state, and the wovenpreform 310 is transformed from the original porous network structureinto a bonding layer 31 with a dense structure after the heat-curingprocess, which makes the woven preform 310 with the flexibility of thenetwork structure and the binding strength of the dense structure.Therefore, the chemical mechanical polishing conditioner made from wovenpreform of the present invention can effectively solve the problem ofresidue glue or thermal cracking the chemical mechanical polishingconditioner during the curing process. Moreover, the woven perform has amore excellent flexibility, while the chemical mechanical polishingconditioner with a more excellent binding strength and polishingperformance can be provided.

With refer to FIG. 4, there is shown a schematic diagram of the wovenpreform according to Example 1 of the present invention. As shown inFIG. 4, the woven preform 41 (corresponding to the woven preform 310 ofFIG. 3A) has a first directional woven matrix 411 and a seconddirectional woven matrix 412, and a woven space (not shown) is formedbetween the first directional woven matrix 411 and the seconddirectional woven matrix 412 adjacent thereto, wherein the abrasiveparticles 42 may be disposed in the woven space of the woven preform 41to be arranged in an array-type pattern. In addition, the maximumdiameter of the woven space is almost identical with the diameter of theabrasive particles 42 such that each woven space is filled with a singleabrasive particles 42.

Furthermore, an included angle A is formed between the first directionalwoven matrix 411 and the second directional woven matrix 412, which maybe varied based on the user's requirements or the polishing conditions.In Example 1, the first directional woven matrix 411 and the seconddirectional woven matrix 412 are arranged to be perpendicular to eachother, that is, the included angle A is 90 degrees, such that theabrasive particles 42 is fixed to the woven space having the includedangle of 90 degrees in advance.

Example 2

With refer to FIG. 5, there is shown a schematic diagram of the wovenpreform according to Example 2 of the present invention. Themanufacturing process of Example 2 is substantially the same as theExample 1, except that an angle of the included angle A between thefirst directional woven matrix and the second directional woven matrixis different. In Example 2, the woven preform 51 has a first directionalwoven matrix 511 and a second directional woven matrix 512, and a wovenspace (not shown) is formed between the first directional woven matrix511 and the second directional woven matrix 512 adjacent thereto,wherein the abrasive particles 52 may be disposed in the woven space ofthe woven preform 51 to achieve an equally spaced patterned arrangement.In addition, the maximum diameter of the woven space is almost identicalwith the diameter of the abrasive particles 52 such that each wovenspace is filled with a single abrasive particles 52.

Furthermore, an included angle B is formed between the first directionalwoven matrix 511 and the second directional woven matrix 512, which maybe varied based on the user's requirements or the polishing conditions.In Example 2, the first directional woven matrix 511 and the seconddirectional woven matrix 512 are arranged to form an included angle B of45 degrees, such that the abrasive particles 52 is fixed to the wovenspace having the angle of 45 degrees in advance.

Example 3

With refer to FIG. 6, there is shown a schematic diagram of the wovenpreform according to Example 3 of the present invention. Themanufacturing process of Example 3 is substantially the same as theExample 1, except that the positions of the abrasive particles in thewoven preform are different. In Example 3, the woven preform 61 has afirst directional woven matrix 611 and a second directional woven matrix612, and a woven space (not shown) is formed between the firstdirectional woven matrix 611 and the second directional woven matrix 612adjacent thereto. Unlike Example 1, in which the abrasive particles aredisposed in the woven space of the woven preform, in Example 3, theabrasive particles 62 are disposed on the surface of the woven preform31, and the abrasive particles 62 may be fixed on the first directionalwoven matrix 611 or the second directional woven matrix 612 of the wovenpreform 61 by a known diamond distribution technique in advance to bearranged in an array-type pattern.

Examples 4 and 5

With refer to FIGS. 7 and 8, there are shown schematic diagrams of thechemical mechanical polishing conditioner made from woven preformaccording to Examples 4 and 5 of the present invention. Themanufacturing processes of Examples 4 and 5 are substantially the sameas the Example 1, except that the surface contour of the substrate isdifferent. Unlike Example 1, in which the substrate surface has a planarcontour and the working surface (i.e. the abrasive surface formed by theabrasive particles) of the chemical mechanical polishing conditioner hasa planar contour, substrate or the working surface of the chemicalmechanical polishing conditioner in Example 4 and Example 5 has anon-planar contour.

As shown in FIG. 7, the chemical mechanical polishing conditionerincludes a substrate 70, a bonding layer 71 and a plurality of abrasiveparticles 72. The abrasive particles 72 are fixed on the substrate 70 bythe bonding layer 71, and the substrate 70 and the tips (i.e. theworking surface) of the abrasive particles 72 have a convex contour,such that the center of the substrate 70 has a height higher than theouter edge of the substrate 70, or the center abrasive particles 72 hasa height higher than the outer edge abrasive particles 72.

In addition, as shown in FIG. 8, the chemical mechanical polishingconditioner includes a substrate 80, a bonding layer 81 and a pluralityof abrasive particles 82. The abrasive particles 82 are fixed on thesubstrate 80 by the bonding layer 81, and the substrate 80 and the tips(i.e. the working surface) of the abrasive particles 82 have a concavecontour, such that the center of the substrate 80 has a height lowerthan the outer edge of the substrate 80, or the center abrasiveparticles 82 has a height lower than the outer edge abrasive particles82.

It should be understood that these examples are merely illustrative ofthe present invention and the scope of the invention should not beconstrued to be defined thereby, and the scope of the present inventionwill be limited only by the appended claims.

What is claimed is:
 1. A chemical mechanical polishing conditioner madefrom a woven preform, comprising: a substrate; a bonding layer disposedon the substrate; and a plurality of abrasive particles embedded in thebonding layer and fixed on the substrate by the bonding layer; whereinthe bonding layer is formed by heat-curing a woven preform, and theabrasive particles are fixed to the woven preform in advance.
 2. Thechemical mechanical polishing conditioner of claim 1, wherein themelting point of the woven preform is below the heat-curing temperature.3. The chemical mechanical polishing conditioner of claim 1, wherein thewoven preform has a first directional woven matrix and a seconddirectional woven matrix.
 4. The chemical mechanical polishingconditioner of claim 3, wherein a woven space is formed between thefirst directional woven matrix and the second directional woven matrixadjacent thereto.
 5. The chemical mechanical polishing conditioner ofclaim 4, wherein a maximum diameter of the woven space is 0.1 to 5 timesa diameter of the abrasive particles.
 6. The chemical mechanicalpolishing conditioner of claim 4, wherein the woven space contains oneto five of the abrasive particles.
 7. The chemical mechanical polishingconditioner of claim 4, wherein the abrasive particles are disposed on asurface of the woven preform, or the abrasive particles are disposed inthe woven space of the woven preform.
 8. The chemical mechanicalpolishing conditioner of claim 7, wherein the abrasive particles have apatterned arrangement or an irregular arrangement.
 9. The chemicalmechanical polishing conditioner of claim 3, wherein an included anglebetween the first directional woven matrix and the second directionalwoven matrix is 10 to 90 degrees.
 10. The chemical mechanical polishingconditioner of claim 9, wherein an included angle between the firstdirectional woven matrix and the second directional woven matrix is 90degrees.
 11. The chemical mechanical polishing conditioner of claim 3,wherein the woven preform further comprises a third directional wovenmatrix and a fourth directional woven matrix.
 12. The chemicalmechanical polishing conditioner of claim 1, wherein the woven preformis a single-layer woven structure or a multilayer woven structure. 13.The chemical mechanical polishing conditioner of claim 1, wherein theabrasive particles are artificial diamond, nature diamond,polycrystalline diamond or cubic boron nitride.
 14. The chemicalmechanical polishing conditioner of claim 1, wherein the abrasiveparticles have a particle size of 30 to 600 μm.
 15. The chemicalmechanical polishing conditioner of claim 1, wherein a composition ofthe bonding layer or the woven preform is made of a ceramic material, abrazing material, an electroplating material, a metallic material, or apolymer material.
 16. The chemical mechanical polishing conditioner ofclaim 15, wherein the ceramic material is a glass fiber, or a carbonfiber.
 17. The chemical mechanical polishing conditioner of claim 15,wherein the brazing material is at least one selected from the groupconsisting of iron, cobalt, nickel, chromium, manganese, silicon,aluminum, and combinations thereof.
 18. The chemical mechanicalpolishing conditioner of claim 15, wherein the polymer material is epoxyresin, polyester resin, polyacrylic resin, phenolic resin.
 19. Thechemical mechanical polishing conditioner of claim 1, wherein thesubstrate is made of stainless steel.
 20. The chemical mechanicalpolishing conditioner of claim 1, wherein the substrate surface is aplanar surface, a convex surface, or a concave surface.